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Showing results 1 to 12 of 12

A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices

Joo, MK, Kang, P, Kim, Y, Kim, GT, Kim, S

ArticleIssue Date2011CitationREVIEW OF SCIENTIFIC INSTRUMENTS, v.82, no.3PublisherAMER INST PHYSICS
Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Joo, MK, Huh, J, Mouis, M, Park, SJ, Jeon, DY, Jang, D, Lee, JH, Kim, GT, Ghibaudo, G

ArticleIssue Date2013CitationAPPLIED PHYSICS LETTERS, v.102, no.5PublisherAMER INST PHYSICS
Controlled surface adsorption of fd filamentous phage by tuning of the pH and the functionalization of the surface

Jeon, DY, Hwang, KH, Park, SJ, Kim, YJ, Joo, MK, Ahn, SE, Kim, GT, Nam, CH

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.109, no.6PublisherAMER INST PHYSICS
Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistorsGo to Link

Kim, JS, Joo, MK, Piao, MX, Ahn, SE, Choi, YH, Na, J, Shin, M, Han, MJ, Jang, HK, Kim, GT

ArticleIssue Date2014CitationTHIN SOLID FILMS, v.558, pp.279 - 282PublisherELSEVIER SCIENCE SA
Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperatureGo to Link

Joo, MK, Mouis, M, Jeon, DY, Barraud, S, Park, SJ, Kim, GT, Ghibaudo, G

ArticleIssue Date2014CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.29, no.4, pp.1 - 13PublisherIOP PUBLISHING LTD
Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixturesGo to Link

Choi, YH, Jang, HK, Jin, JE, Joo, MK, Piao, M, Shin, JM, Kim, JS, Na, J, Kim, GT

ArticleIssue Date2014CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.4, pp.1 - 6PublisherIOP PUBLISHING LTD
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivationGo to Link

Jin, JE, Na, J, Jang, HK, Choi, HJ, Shim, JH, Joo, MK, Shin, M, Huh, J, Kim, JS, Piao, M, et al.

ArticleIssue Date2014CitationNANOSCALE, v.6, no.1, pp.433 - 441PublisherROYAL SOC CHEMISTRY
Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistorsGo to Link

Kim, JS, Joo, MK, Piao, MX, Ahn, SE, Choi, YH, Jang, HK, Kim, GT

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.115, no.11, pp.1 - 7PublisherAMER INST PHYSICS
Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactionsGo to Link

Huh, J, Joo, MK, Jang, D, Lee, JH, Kim, GT

ArticleIssue Date2012CitationJOURNAL OF MATERIALS CHEMISTRY, v.22, no.45, pp.24012 - 24016PublisherROYAL SOC CHEMISTRY
Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Na, J, Shin, M, Joo, MK, Huh, J, Kim, YJ, Choi, HJ, Shim, JH, Kim, GT

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.104, no.23, pp.1 - 6PublisherAMER INST PHYSICS
Separation of surface accumulation and bulk neutral channel in junctionless transistors

Jeon, DY, Park, SJ, Mouis, M, Joo, MK, Barraud, S, Kim, GT, Ghibaudo, G

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.104, no.26PublisherAMER INST PHYSICS
Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Joo, MK, Mouis, M, Jeon, DY, Kim, GT, Kim, UJ, Ghibaudo, G

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.114, no.15PublisherAMER INST PHYSICS
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