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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors Go to Link

Kim, JS, Joo, MK, Piao, MX, Ahn, SE, Choi, YH, Na, J, Shin, M, Han, MJ, Jang, HK, Kim, GT

ArticleIssue Date2014CitationTHIN SOLID FILMS, v.558, pp.279 - 282PublisherELSEVIER SCIENCE SA

Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures Go to Link

Choi, YH, Jang, HK, Jin, JE, Joo, MK, Piao, M, Shin, JM, Kim, JS, Na, J, Kim, GT

ArticleIssue Date2014CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.4, pp.1 - 6PublisherIOP PUBLISHING LTD

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation Go to Link

Jin, JE, Na, J, Jang, HK, Choi, HJ, Shim, JH, Joo, MK, Shin, M, Huh, J, Kim, JS, Piao, M, et al.

ArticleIssue Date2014CitationNANOSCALE, v.6, no.1, pp.433 - 441PublisherROYAL SOC CHEMISTRY

Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Na, J, Shin, M, Joo, MK, Huh, J, Kim, YJ, Choi, HJ, Shim, JH, Kim, GT

ArticleIssue Date2014CitationAPPLIED PHYSICS LETTERS, v.104, no.23, pp.1 - 6PublisherAMER INST PHYSICS

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