Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures
DC Field | Value | Language |
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dc.contributor.author | Jung, Sol | - |
dc.contributor.author | Yim, Haein | - |
dc.date.available | 2021-02-22T11:32:38Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10202 | - |
dc.description.abstract | Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd nnultilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 angstrom/Pd 14 angstrom](5) and [CoSiB 9 angstrom/Pd 14 angstrom](5) multilayers, respectively. The PMA arises from t(CoSiB) = 3 angstrom to t(CoSiB) = 9 angstrom and disappears after t(CoSiB) = 9 angstrom. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1166/jnn.2015.11250 | - |
dc.identifier.scopusid | 2-s2.0-84947241895 | - |
dc.identifier.wosid | 000365554600169 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp 8336 - 8339 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 15 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 8336 | - |
dc.citation.endPage | 8339 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TUNNEL-JUNCTION | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | SPIN-TRANSFER | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | MEDIA | - |
dc.subject.keywordAuthor | Perpendicular Magnetic Anisotropy | - |
dc.subject.keywordAuthor | Amorphous | - |
dc.subject.keywordAuthor | Multilayer | - |
dc.subject.keywordAuthor | Thin Film | - |
dc.subject.keywordAuthor | CoSiB | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00169 | - |
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