Perpendicular magnetization of CoFeB on top of an amorphous buffer layer
- Authors
- Kim, Dongseok; Jung, K. Y.; Joo, Sungjung; Jang, Youngjae; Hong, Jinki; Lee, B. C.; You, C. Y.; Cho, J. H.; Kim, M. Y.; Rhie, K.
- Issue Date
- Jan-2015
- Publisher
- ELSEVIER
- Keywords
- STT-MRAM; Perpendicular magnetization; CoFeB/MgO
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.374, pp 350 - 353
- Pages
- 4
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 374
- Start Page
- 350
- End Page
- 353
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10696
- DOI
- 10.1016/j.jmmm.2014.08.030
- ISSN
- 0304-8853
1873-4766
- Abstract
- Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic held. The critical CoFeB thickness for perpendicular anisotropy was 1.8 nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required. (C) 2014 Elsevier B.V. All rights reserved
- Files in This Item
-
Go to Link
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.