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Perpendicular magnetization of CoFeB on top of an amorphous buffer layer

Authors
Kim, DongseokJung, K. Y.Joo, SungjungJang, YoungjaeHong, JinkiLee, B. C.You, C. Y.Cho, J. H.Kim, M. Y.Rhie, K.
Issue Date
Jan-2015
Publisher
ELSEVIER
Keywords
STT-MRAM; Perpendicular magnetization; CoFeB/MgO
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.374, pp 350 - 353
Pages
4
Journal Title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume
374
Start Page
350
End Page
353
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10696
DOI
10.1016/j.jmmm.2014.08.030
ISSN
0304-8853
1873-4766
Abstract
Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic held. The critical CoFeB thickness for perpendicular anisotropy was 1.8 nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required. (C) 2014 Elsevier B.V. All rights reserved
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첨단소재·전자융합공학부 (신소재물리전공)
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