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Correlating nucleation density with heating ramp rates in continuous graphene film formation

Authors
Jung, Da HeeKang, CheongSon, Byung HeeAhn, Yeong HwanLee, Jin Seok
Issue Date
Dec-2014
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
CARBON, v.80, pp 708 - 715
Pages
8
Journal Title
CARBON
Volume
80
Start Page
708
End Page
715
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/10742
DOI
10.1016/j.carbon.2014.09.016
ISSN
0008-6223
1873-3891
Abstract
Graphene films with different nucleation densities were successfully grown on Cu foils using an atmospheric pressure chemical vapor deposition (APCVD) method. We investigated the effect of heating ramp rate on graphene growth, which is critical to the control of both the domain density and the defects density in further synthesized graphene film. Density of graphene domains was reduced with a decrease in ramp rate; heating Cu foil at a lower rate produced fiat and smooth surface with larger Cu grains. These surface roughness and grain size-heating rate association were confirmed by atomic force microscope and electron backscatter diffraction analysis. By comparing micro Raman mappings of the graphene films grown with different ramp rates, we found that the number of layers, defect density, and uniformity of as-grown graphene films were strongly dependent on heating ramp rate. With these observations, we demonstrate the growth mechanism of graphene films as a function of the heating ramp rates. (C) 2014 Elsevier Ltd. All rights reserved.
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