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Electron doping limit in Al-doped ZnO by donor-acceptor interactions
- Authors
- Noh, Ji-Young; Kim, Hanchul; Kim, Yong-Sung; Park, C. H.
- Issue Date
- Apr-2013
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.113, no.15
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 113
- Number
- 15
- ISSN
- 0021-8979
1089-7550
- Abstract
- We investigate the maximum available free electron carrier density in Al-doped n-type ZnO, based on density-functional theory calculations. The Coulomb interactions between the Al dopants and the Zn-vacancy native acceptors are found to limit the carrier density. In typical growth conditions, the n-type doping limit is found to be in the range of 10(19) similar to 10(21) cm(-3). (C) 2013 AIP Publishing LLC
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Related Researcher
- Kim, Han Chul
- 첨단소재·전자융합공학부 (신소재물리전공)