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Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption

Authors
Hwang, EunkyungChang, Yun HeeKim, Yong-SungKoo, Ja-YongKim, Hanchul
Issue Date
Oct-2012
Publisher
KOREAN PHYSICAL SOC
Keywords
Silicon surface; Oxygen molecule; Precursor; Initial adsorption; Sticking Coefficient; Room temperature
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.7, pp 1046 - 1050
Pages
5
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
61
Number
7
Start Page
1046
End Page
1050
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/11833
DOI
10.3938/jkps.61.1046
ISSN
0374-4884
1976-8524
Abstract
The initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O-2-induced feature. The very initial sticking coefficient of O-2 below 0.04 Langmuir is measured to be similar to 0.16. Upon thermal annealing at 250-600 A degrees C, the bright O-2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O-2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.
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