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Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption

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dc.contributor.authorHwang, Eunkyung-
dc.contributor.authorChang, Yun Hee-
dc.contributor.authorKim, Yong-Sung-
dc.contributor.authorKoo, Ja-Yong-
dc.contributor.authorKim, Hanchul-
dc.date.available2021-02-22T12:33:04Z-
dc.date.issued2012-10-
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/11833-
dc.description.abstractThe initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O-2-induced feature. The very initial sticking coefficient of O-2 below 0.04 Langmuir is measured to be similar to 0.16. Upon thermal annealing at 250-600 A degrees C, the bright O-2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O-2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherKOREAN PHYSICAL SOC-
dc.titlePrecursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.3938/jkps.61.1046-
dc.identifier.scopusid2-s2.0-84867456227-
dc.identifier.wosid000309867000010-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.7, pp 1046 - 1050-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume61-
dc.citation.number7-
dc.citation.startPage1046-
dc.citation.endPage1050-
dc.type.docTypeArticle-
dc.identifier.kciidART001705727-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusSI EJECTION-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusSTM-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusSTICKING-
dc.subject.keywordPlusBEAM-
dc.subject.keywordPlusO-2-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusKINETICS-
dc.subject.keywordAuthorSilicon surface-
dc.subject.keywordAuthorOxygen molecule-
dc.subject.keywordAuthorPrecursor-
dc.subject.keywordAuthorInitial adsorption-
dc.subject.keywordAuthorSticking Coefficient-
dc.subject.keywordAuthorRoom temperature-
dc.identifier.urlhttps://link.springer.com/article/10.3938%2Fjkps.61.1046-
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