Effect of Adventitious Carbon on Pit Formation of Monolayer MoS2
- Park, Sangwook; Siahrostami, Samira; Park, Joonsuk; Mostaghimi, Amir Hassan Bagherzadeh; Kim, Taeho Roy; Vallez, Lauren; Gill, Thomas Mark; Park, Woosung; Goodson, Kenneth E.; Sinclair, Robert; Zheng, Xiaolin
- Issue Date
- WILEY-V C H VERLAG GMBH
- 2D materials; adventitious carbon; hydrogen evolution reaction (HER); monolayer MoS2; pit formation; thermal oxidation
- ADVANCED MATERIALS, v.32, no.37
- Journal Title
- ADVANCED MATERIALS
- Forming pits on molybdenum disulfide (MoS2) monolayers is desirable for (opto)electrical, catalytic, and biological applications. Thermal oxidation is a potentially scalable method to generate pits on monolayer MoS2, and pits are assumed to preferentially form around undercoordinated sites, such as sulfur vacancies. However, studies on thermal oxidation of MoS(2)monolayers have not considered the effect of adventitious carbon (C) that is ubiquitous and interacts with oxygen at elevated temperatures. Herein, the effect of adventitious C on the pit formation on MoS(2)monolayers during thermal oxidation is studied. The in situ environmental transmission electron microscopy measurements herein show that pit formation is preferentially initiated at the interface between adventitious C nanoparticles and MoS2, rather than only sulfur vacancies. Density functional theory (DFT) calculations reveal that the C/MoS(2)interface favors the sequential adsorption of oxygen atoms with facile kinetics. These results illustrate the important role of adventitious C on pit formation on monolayer MoS2.
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- 공과대학 > 기계시스템학부 > 1. Journal Articles
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