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Effect of Adventitious Carbon on Pit Formation of Monolayer MoS2

Authors
Park, SangwookSiahrostami, SamiraPark, JoonsukMostaghimi, Amir Hassan BagherzadehKim, Taeho RoyVallez, LaurenGill, Thomas MarkPark, WoosungGoodson, Kenneth E.Sinclair, RobertZheng, Xiaolin
Issue Date
Sep-2020
Publisher
WILEY-V C H VERLAG GMBH
Keywords
2D materials; adventitious carbon; hydrogen evolution reaction (HER); monolayer MoS2; pit formation; thermal oxidation
Citation
ADVANCED MATERIALS, v.32, no.37
Journal Title
ADVANCED MATERIALS
Volume
32
Number
37
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/1253
DOI
10.1002/adma.202003020
ISSN
0935-9648
Abstract
Forming pits on molybdenum disulfide (MoS2) monolayers is desirable for (opto)electrical, catalytic, and biological applications. Thermal oxidation is a potentially scalable method to generate pits on monolayer MoS2, and pits are assumed to preferentially form around undercoordinated sites, such as sulfur vacancies. However, studies on thermal oxidation of MoS(2)monolayers have not considered the effect of adventitious carbon (C) that is ubiquitous and interacts with oxygen at elevated temperatures. Herein, the effect of adventitious C on the pit formation on MoS(2)monolayers during thermal oxidation is studied. The in situ environmental transmission electron microscopy measurements herein show that pit formation is preferentially initiated at the interface between adventitious C nanoparticles and MoS2, rather than only sulfur vacancies. Density functional theory (DFT) calculations reveal that the C/MoS(2)interface favors the sequential adsorption of oxygen atoms with facile kinetics. These results illustrate the important role of adventitious C on pit formation on monolayer MoS2.
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공과대학 (기계시스템학부)
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