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Tunnel Magnetoresistance of an As-deposited Co2FeAl0.5Si0.5-based Magnetic Tunnel Junction on a Ta/Ru Buffer Layer

Authors
Hwang, Jae YounLee, Gae HunSong, Yun HeubYim, Hae In
Issue Date
Jul-2010
Publisher
KOREAN PHYSICAL SOC
Keywords
Co2FeAl0.5Si0.5; Heusler alloy; Magnetic tunnel junction; Metal buffer layer
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.1, pp 160 - 163
Pages
4
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
57
Number
1
Start Page
160
End Page
163
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13175
DOI
10.3938/jkps.57.160
ISSN
0374-4884
1976-8524
Abstract
A magnetic tunnel junction (MTJ) with a Co2FeAl0.5Si0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 degrees C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlOx/CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.
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첨단소재·전자융합공학부 (신소재물리전공)
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