High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
- Authors
- Kim, Taesoo; Fan, Sidi; Lee, Sanghyub; Joo, Min-Kyu; Lee, Young Hee
- Issue Date
- Aug-2020
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.10, no.1
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 10
- Number
- 1
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/1330
- DOI
- 10.1038/s41598-020-70038-6
- ISSN
- 2045-2322
- Abstract
- Monolayer molybdenum disulfide (MoS2) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of two-dimensional layered materials. Herein, we propose a Gr/MoS2 heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of similar to 10 (similar to 100 cm(2) V-1 s(-1)) compared to that of monolayer MoS2, while retaining a high on/off current ratio of similar to 10(8) at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias (V-BG) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS2 heterointerface from 528 meV (n-MoS2/p-Gr) to 116 meV (n-MoS2/n-Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS2, where the barrier height is controlled by electrostatic doping.
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