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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

Authors
Hwang, J. Y.Lee, S. Y.Lee, N. I.Yim, H. I.Kim, M. Y.Lee, W. C.Rhee, J. R.Chun, B. S.Kim, T. W.Kim, Y. K.Lee, S. S.Hwang, D. G.Ri, E. J.
Issue Date
Jun-2009
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Amorphous ferromagnetic; bias voltage dependence; CoFeSiB; magnetic tunnel junction
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2396 - 2398
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
45
Number
6
Start Page
2396
End Page
2398
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13750
DOI
10.1109/TMAG.2009.2018586
ISSN
0018-9464
Abstract
The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.
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