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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction
- Authors
- Hwang, J. Y.; Lee, S. Y.; Lee, N. I.; Yim, H. I.; Kim, M. Y.; Lee, W. C.; Rhee, J. R.; Chun, B. S.; Kim, T. W.; Kim, Y. K.; Lee, S. S.; Hwang, D. G.; Ri, E. J.
- Issue Date
- Jun-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous ferromagnetic; bias voltage dependence; CoFeSiB; magnetic tunnel junction
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp 2396 - 2398
- Pages
- 3
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 45
- Number
- 6
- Start Page
- 2396
- End Page
- 2398
- ISSN
- 0018-9464
1941-0069
- Abstract
- The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.
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