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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

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dc.contributor.authorHwang, J. Y.-
dc.contributor.authorLee, S. Y-
dc.contributor.authorLee, N. I.-
dc.contributor.authorYim, H. I.-
dc.contributor.authorKim, M. Y.-
dc.contributor.authorLee, W. C.-
dc.contributor.authorRhee, J. R.-
dc.contributor.authorChun, B. S.-
dc.contributor.authorKim, T. W.-
dc.contributor.authorKim, Y. K.-
dc.contributor.authorLee, S. S.-
dc.contributor.authorHwang, D. G.-
dc.contributor.authorRi, E. J.-
dc.date.available2021-02-22T14:17:10Z-
dc.date.issued2009-06-
dc.identifier.issn0018-9464-
dc.identifier.issn1941-0069-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13750-
dc.description.abstractThe three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEffect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TMAG.2009.2018586-
dc.identifier.scopusid2-s2.0-66549089940-
dc.identifier.wosid000266329800012-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp 2396 - 2398-
dc.citation.titleIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.volume45-
dc.citation.number6-
dc.citation.startPage2396-
dc.citation.endPage2398-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusBIAS VOLTAGE-
dc.subject.keywordAuthorAmorphous ferromagnetic-
dc.subject.keywordAuthorbias voltage dependence-
dc.subject.keywordAuthorCoFeSiB-
dc.subject.keywordAuthormagnetic tunnel junction-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/4957738/-
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