Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers
- Authors
- Yim, H. I.; Lee, S. Y.; Hwang, J. Y.; Rhee, J. R.; Chun, B. S.; Wang, K. L.; Kim, Y. K.; Kim, T. W.; Lee, S. S.; Hwang, D. G.
- Issue Date
- Aug-2008
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.205, no.8, pp 1847 - 1850
- Pages
- 4
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 205
- Number
- 8
- Start Page
- 1847
- End Page
- 1850
- ISSN
- 1862-6300
1862-6319
- Abstract
- Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx /free layer 10/AlOx /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and –0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.