Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers
DC Field | Value | Language |
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dc.contributor.author | Yim, H. I. | - |
dc.contributor.author | Lee, S. Y. | - |
dc.contributor.author | Hwang, J. Y. | - |
dc.contributor.author | Rhee, J. R. | - |
dc.contributor.author | Chun, B. S. | - |
dc.contributor.author | Wang, K. L. | - |
dc.contributor.author | Kim, Y. K. | - |
dc.contributor.author | Kim, T. W. | - |
dc.contributor.author | Lee, S. S. | - |
dc.contributor.author | Hwang, D. G. | - |
dc.date.available | 2021-02-22T14:33:20Z | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.issn | 1862-6319 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/14216 | - |
dc.description.abstract | Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx /free layer 10/AlOx /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and –0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers | - |
dc.type | Article | - |
dc.publisher.location | 독일 | - |
dc.identifier.doi | 10.1002/pssa.200723639 | - |
dc.identifier.scopusid | 2-s2.0-54249169159 | - |
dc.identifier.wosid | 000258863700026 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.205, no.8, pp 1847 - 1850 | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 205 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1847 | - |
dc.citation.endPage | 1850 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
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