Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field
- Authors
- Joo, Min-Kyu; Kim, Joonggyu; Park, Ji-Hoon; Nguyen, Van Luan; Kim, Ki Kang; Lee, Young Hee; Suh, Dongseok
- Issue Date
- Sep-2016
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS NANO, v.10, no.9, pp 8803 - 8811
- Pages
- 9
- Journal Title
- ACS NANO
- Volume
- 10
- Number
- 9
- Start Page
- 8803
- End Page
- 8811
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/146240
- DOI
- 10.1021/acsnano.6b04547
- ISSN
- 1936-0851
1936-086X
- Abstract
- A graphene Hall element (GHE) is an optimal system for a magnetic sensor because of its perfect two-dimensional, (2-D) structure, high carrier mobility, and widely tunable carrier concentration. Even though several proof-of-concept devices have been proposed, manufacturing them by mechanical exfoliation of 2-D material or electron-beam lithography is of limited feasibility. Here, we demonstrate a high quality GHE, array having a graphene on hexagonal-BN (h-BN) heterostructure, fabricated by photolithography and large-area 2-D materials grown by chemical vapor deposition techniques. 11 superior performance of GHE was achieved with the help of a bottom h-BN layer, and showed a maximum current-normalized sensitivity of 1986 V/AT, a minimum magnetic resolution of 0.5 mG/Hz(0.5) at f = 300 Hz, and an effective dynamic range larger than 74 dB. Furthermore, on the basis of a thorough understanding of the shift of charge neutrality point depending on various parameters, an analytical model that predicts the magnetic sensor operation of a GHE from its transconductance data without magnetic field is proposed, simplifying the evaluation of each GHE design. These results demonstrate the feasibility of this highly performing graphene device using large-Scale manufacturing-friendly fabrication methods.
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