Highly efficient green, blue, and white phosphorescent inverted organic light-emitting diodes by improving charge injection and balance
- Authors
- Lee, H (Lee, Hyunkoo); Maeng, MJ (Maeng, Min-Jae); Hong, JA (Hong, Jong-Am); Najnin, R (Najnin, Rokeya); Moon, J (Moon, Jaehyun); Cho, H (Cho, Hyunsu); Lee, J (Lee, Jonghee); Yu, BG (Yu, Byoung-Gon); Park, Y (Park, Yongsup); Cho, NS (Cho, Nam Sung)
- Issue Date
- Oct-2017
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.5, no.38, pp.9911 - 9919
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 5
- Number
- 38
- Start Page
- 9911
- End Page
- 9919
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/146959
- DOI
- 10.1039/c7tc02795h
- ISSN
- 2050-7526
- Abstract
- To improve the performance of inverted organic light-emitting diodes (OLEDs), we investigated the electrical, optical, and interfacial properties of three different lithium (Li)-doped electron transport materials (ETMs): tris(3-(3pyridyl) mesityl) borane (3TPYMB), 1,3,5-tri(m-pyrid-3-yl-phenyl) benzene (TmPyPB), and 1,3-bis(3,5-dipyrid-3-yl-phenyl) benzene (BmPyPB). The electron injection barriers (EIBs) between indium-tin-oxide and the ETMs were deduced for both pristine and Li-doped cases from ultraviolet photoelectron spectroscopy measurements and optical band gap values. The Li-doped ETMs showed EIB values of approximately 0.03 eV, 0.77 eV, and 0.81 eV for 3TPYMB, TmPyPB, and BmPyPB, respectively, which are much lower than those of their pristine counterparts of 0.94 eV, 1.14 eV, and 1.48 eV, respectively. The Li-doped ETMs were employed as electron injection layers (EILs) of inverted bottom-emission OLEDs (IBE-OLEDs) with green phosphorescence. IBE-OLEDs with 3TPYMB, TmPyPB, and BmPyPB EILs exhibited driving voltages of 3.6 V, 4.0 V, and 4.5 V at 1000 cd m(-2) and maximum external quantum efficiencies (EQEs) of 20.3%, 19.7%, and 16.5%, respectively. From the low EIB of Li-doped 3TPYMB, we also demonstrated highly efficient blue and white phosphorescent IBE-OLEDs. We optimized the device structure to improve
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