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Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide

Authors
Borys, Nicholas J.Barnard, Edward S.Gao, ShiyuanYao, KaiyuanBao, WeiBuyanin, AlexanderZhang, YingjieTongay, SefaattinKo, ChanghyunSuh, JoonkiWeber-Bargioni, AlexanderWu, JunqiaoYang, LiSchuck, P. James
Issue Date
Feb-2017
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.11, no.2, pp 2115 - 2123
Pages
9
Journal Title
ACS NANO
Volume
11
Number
2
Start Page
2115
End Page
2123
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147001
DOI
10.1021/acsnano.6b08278
ISSN
1936-0851
1936-086X
Abstract
Broadband optoelectronics such as artificial light harvesting technologies necessitate efficient and, ideally, tunable coupling of excited states over a wide range of energies. In monolayer MoS2, a prototypical two-dimensional layered semiconductor, the excited state manifold spans the visible electromagnetic spectrum and is comprised of an interconnected network of excitonic and free-carrier excitations. Here, photoluminescence excitation spectroscopy is used to reveal the energetic and spatial dependence of broadband excited state coupling to the ground-state luminescent excitons of monolayer MoS2. Photoexcitation of the direct band gap excitons is found to strengthen with increasing energy, demonstrating that interexcitonic coupling across the Brillouin zone is more efficient than previously reported, and thus bolstering the import and appeal of these materials for broadband optoelectronic applications. Narrow excitation resonances that are superimposed on the broadband photoexcitation spectrum are identified and coincide with the energetic positions of the higher-energy excitons and the electronic band gap as predicted by first-principles calculations. Identification of such features outlines a facile route to measure the optical and electronic band gaps and thus the exciton binding energy in the more sophis
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Ko, Chang Hyun
첨단소재·전자융합공학부 (신소재물리전공)
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