Strong Coulomb scattering effects on low frequency noise in monolayer WS2 field-effect transistors
- Authors
- Joo, MK (Joo, Min-Kyu); Yun, Y (Yun, Yoojoo); Yun, S (Yun, Seokjoon); Lee, YH (Lee, Young Hee); Suh, D (Suh, Dongseok)
- Issue Date
- Oct-2016
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.109, no.15, pp 1 - 6
- Pages
- 6
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 109
- Number
- 15
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147025
- DOI
- 10.1063/1.4964467
- ISSN
- 0003-6951
1077-3118
- Abstract
- When atomically thin semiconducting transition metal dichalcogenides are used as a channel material, they are inevitably exposed to supporting substrates. This situation can lead to masking of intrinsic properties by undesired extrinsic doping and/or additional conductance fluctuations from the largely distributed Coulomb impurities at the interface between the channel and the substrate. Here, we report low-frequency noise characteristics in monolayer WS2 field-effect transistors on silicon/silicon-oxide substrate. To mitigate the effect of extrinsic low-frequency noise sources, a nitrogen annealing was carried out to provide better interface quality and to suppress the channel access resistance. The carrier number fluctuation and the correlated mobility fluctuation (CNF-CMF) model was better than the sole CNF one to explain our low-frequency noise data, because of the strong Coulomb scattering effect on the effective mobility caused by carrier trapping/detrapping at oxide traps. The temperature-dependent field-effect mobility in the four-probe configuration and the Coulomb scattering parameters are presented to support this strong Coulomb scattering effect on carrier transport in monolayer WS2 field-effect transistor. Published by AIP Publishing.
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