Absorption dichroism of monolayer 1T '-MoTe2 in visible range
- Authors
- Han, Gang Hee; Keum, Dong Hoon; Zhao, Jiong; Shin, Bong Gyu; Song, Seunghyun; Bae, Jung Jun; Lee, Jubok; Hokim, Jung Ho; Kim, Hyun; Moon, Byoung Hee; Lee, Young Hee
- Issue Date
- Sep-2016
- Publisher
- IOP PUBLISHING LTD
- Keywords
- transition metal dichalcogenides; MoTe2; chemical vapor deposition; absorption dichroism
- Citation
- 2D MATERIALS, v.3, no.3, pp 1 - 6
- Pages
- 6
- Journal Title
- 2D MATERIALS
- Volume
- 3
- Number
- 3
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147038
- DOI
- 10.1088/2053-1583/3/3/031010
- ISSN
- 2053-1583
2053-1583
- Abstract
- Among various transition metal dichalcogenides, MoTe2 has drawn attention due to its capability of robust phase engineering between semiconducting (2H) and semi-metallic distorted octahedral (1T') phase. In particular, 1T'-MoTe2 has been predicted to have intriguing physics such as quantum spin Hall. insulator, large magnetoresistance, and superconductivity. Recent progress showed weak antilocalization behavior in 1T'-MoTe2 which is the one of representative characteristics in topological insulator. Here, we grow centimeter-scale monolayer 1T'-MoTe2 on SiO2/Si substrate via chemical vapordeposition and demonstrate dichroism in visible range. Ribbon-like 1T'-MoTe2 flakes were initially nucleated randomly on SiO2 substrate and at a later stage merged to form a continuous monolayer film over the entire substrate. Each flake revealed one dimensional Mo-Mo dimerization feature and anisotropic absorption behavior in visible range (400-600 nm). This allowed us to detect the grain boundary due to stark contrast difference among flakes in different orientations.
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