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Absorption dichroism of monolayer 1T '-MoTe2 in visible range

Authors
Han, Gang HeeKeum, Dong HoonZhao, JiongShin, Bong GyuSong, SeunghyunBae, Jung JunLee, JubokHokim, Jung HoKim, HyunMoon, Byoung HeeLee, Young Hee
Issue Date
Sep-2016
Publisher
IOP PUBLISHING LTD
Keywords
transition metal dichalcogenides; MoTe2; chemical vapor deposition; absorption dichroism
Citation
2D MATERIALS, v.3, no.3, pp 1 - 6
Pages
6
Journal Title
2D MATERIALS
Volume
3
Number
3
Start Page
1
End Page
6
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147038
DOI
10.1088/2053-1583/3/3/031010
ISSN
2053-1583
2053-1583
Abstract
Among various transition metal dichalcogenides, MoTe2 has drawn attention due to its capability of robust phase engineering between semiconducting (2H) and semi-metallic distorted octahedral (1T') phase. In particular, 1T'-MoTe2 has been predicted to have intriguing physics such as quantum spin Hall. insulator, large magnetoresistance, and superconductivity. Recent progress showed weak antilocalization behavior in 1T'-MoTe2 which is the one of representative characteristics in topological insulator. Here, we grow centimeter-scale monolayer 1T'-MoTe2 on SiO2/Si substrate via chemical vapordeposition and demonstrate dichroism in visible range. Ribbon-like 1T'-MoTe2 flakes were initially nucleated randomly on SiO2 substrate and at a later stage merged to form a continuous monolayer film over the entire substrate. Each flake revealed one dimensional Mo-Mo dimerization feature and anisotropic absorption behavior in visible range (400-600 nm). This allowed us to detect the grain boundary due to stark contrast difference among flakes in different orientations.
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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