An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells
DC Field | Value | Language |
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dc.contributor.author | Seo, Seongrok | - |
dc.contributor.author | Park, Ik Jae | - |
dc.contributor.author | Kim, Myungjun | - |
dc.contributor.author | Lee, Seonhee | - |
dc.contributor.author | Bae, Changdeuck | - |
dc.contributor.author | Jung, Hyun Suk | - |
dc.contributor.author | Park, Nam-Gyu | - |
dc.contributor.author | Kim, Jin Young | - |
dc.contributor.author | Shin, Hyunjung | - |
dc.date.accessioned | 2022-04-19T09:47:34Z | - |
dc.date.available | 2022-04-19T09:47:34Z | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147058 | - |
dc.description.abstract | NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and undoped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (L-D = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/c6nr01601d | - |
dc.identifier.scopusid | 2-s2.0-84973572929 | - |
dc.identifier.wosid | 000377919800009 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.8, no.22, pp 11403 - 11412 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 8 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 11403 | - |
dc.citation.endPage | 11412 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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