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Improved ohmic contacts for SiC nanowire devices with nickel-silicide

Authors
Choi, JH (Choi, Ji-Hoon)Bano, E (Bano, Edwige)Latu-Romain, L (Latu-Romain, LOllivier, M (Ollivier, Maelig)Joo, MK (Joo, Min-Kyu)Jeon, DY (Jeon, Dae-Young)Fradetal, L (Fradetal, Louis)Rossi, F (Rossi, Francesca)Attolini, G (Attolini, Giovann
Issue Date
Nov-2015
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.650, pp.853 - 857
Journal Title
JOURNAL OF ALLOYS AND COMPOUNDS
Volume
650
Start Page
853
End Page
857
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147103
DOI
10.1016/j.jallcom.2015.07.298
ISSN
0925-8388
Abstract
The effect of annealing temperature has been investigated to obtain a low ohmic contact for silicon carbide nanowire field-effect transistor (SiC NW FET). Fabrication of two types of SiC NW FET has been studied using cylinder and needle shapes of SiC NW. The experimental results show that an annealing temperature of 650 degrees C leads to the lowest ohmic contact resistance on SiC NW FET. It is believed that the Ni silicide phases formed on SiC NWs make low resistance ohmic contacts. Ni silicide phases begin to intrude into the SiC NW channel after an annealing step at 700 degrees C for 30 s and consequently, it forms either a SiC/Ni silicide heterostructure or a fully Ni silicidized SiC NW depending on the channel length. A fully silicidized SiC NW exhibits a low channel resistance (740 Omega) and a high current density (1.46 x 10(7) A cm(-2) at 1.4 V). The needle shape of SiC NWs is transformed into a bead necklace like morphology after Ni silicide intrusion. (C) 2015 Elsevier B.V. All rights reserved.
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