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Toward Charge Neutralization of CVD Graphene

Authors
김기강김수민
Issue Date
Nov-2015
Publisher
The Korean Vacuum Society
Citation
Applied Science and Convergence Technology, v.24, no.6, pp 268 - 272
Pages
5
Journal Title
Applied Science and Convergence Technology
Volume
24
Number
6
Start Page
268
End Page
272
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147106
DOI
10.5757/ASCT.2015.24.6.268
ISSN
1225-8822
2288-6559
Abstract
We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an SiO2/ Si substrate is spontaneously p-doped. The extent of p-doping from the SiO2 substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.
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