High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
- Authors
- Perello, DJ (Perello, David J.; Chae, SH (Chae, Sang Hoon); Song, S (Song, Seunghyun); Lee, YH (Lee, Young Hee)
- Issue Date
- Jul-2015
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NATURE COMMUNICATIONS, v.6
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 6
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147152
- DOI
- 10.1038/ncomms8809
- ISSN
- 2041-1723
- Abstract
- Recent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication. With aluminium contacts to black phosphorus, a unipolar to ambipolar transition occurs as flake thickness increases from 3 to 13 nm. The 13-nm aluminium-contacted flake displays graphene-like symmetric hole and electron mobilities up to 950 cm(2)V(-1)s(-1) at 300 K, while a 3 nm flake displays unipolar n-type switching with on/off ratios greater than 10(5) (10(7)) and electron mobility of 275 (630) cm(2)V(-1)s(-1) at 300 K (80 K). For palladium contacts, p-type behaviour dominates in thick flakes, while 2.5-7 nm flakes have symmetric ambipolar transport. These results demonstrate a leap in n-type performance and exemplify the logical switching capabilities of black phosphorus.
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Collections - ICT융합공학부 > 전자공학전공 > 1. Journal Articles
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