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High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

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dc.contributor.authorPerello, David J.-
dc.contributor.authorChae, Sang Hoon-
dc.contributor.authorSong, Seunghyun-
dc.contributor.authorLee, Young Hee-
dc.date.accessioned2022-04-19T09:50:47Z-
dc.date.available2022-04-19T09:50:47Z-
dc.date.issued2015-07-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147152-
dc.description.abstractRecent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication. With aluminium contacts to black phosphorus, a unipolar to ambipolar transition occurs as flake thickness increases from 3 to 13 nm. The 13-nm aluminium-contacted flake displays graphene-like symmetric hole and electron mobilities up to 950 cm(2)V(-1)s(-1) at 300 K, while a 3 nm flake displays unipolar n-type switching with on/off ratios greater than 10(5) (10(7)) and electron mobility of 275 (630) cm(2)V(-1)s(-1) at 300 K (80 K). For palladium contacts, p-type behaviour dominates in thick flakes, while 2.5-7 nm flakes have symmetric ambipolar transport. These results demonstrate a leap in n-type performance and exemplify the logical switching capabilities of black phosphorus.-
dc.language영어-
dc.language.isoENG-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleHigh-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1038/ncomms8809-
dc.identifier.scopusid2-s2.0-84938342782-
dc.identifier.wosid000358860300001-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.6-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume6-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
dc.subject.keywordPlustransport-
dc.subject.keywordPlusdevices-
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