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MoS2 Heterojunctions by Thickness Modulation

Authors
Tosun, MahmutFu, DeyiDesai, Sujay B.Ko, ChanghyunKang, Jeong SeukLien, Der-HsienNajmzadeh, MohammadTongay, SefaattinWu, JunqiaoJavey, Ali
Issue Date
Jun-2015
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5
Journal Title
SCIENTIFIC REPORTS
Volume
5
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147162
DOI
10.1038/srep10990
ISSN
2045-2322
Abstract
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.
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첨단소재·전자융합공학부 (신소재물리전공)
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