Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

Abstract

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlOx/CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower MS ( = 800 emu/cm(3)) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to con. rm that Si and B atoms were arranged evenly in the top and bottom portions of AlOx/CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process. (C) 2006 Elsevier B.V. All rights reserved.