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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Authors
Jin, JEJang, HKChoi, HJShim, JHKim, GTNa, JJoo, MKShin, MHuh, JKim, JSPiao, M
Issue Date
Jan-2014
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.6, no.1, pp.433 - 441
Journal Title
NANOSCALE
Volume
6
Number
1
Start Page
433
End Page
441
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147380
ISSN
2040-3364
Abstract
Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (similar to 11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be N-it similar to 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (similar to 40 nm-thick) without the passivation, the HMF model was clearly observed all over th
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