Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Authors
Kim, JSJoo, MKPiao, MXAhn, SEChoi, YHJang, HKKim, GT
Issue Date
Mar-2014
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.115, no.11, pp 1 - 7
Pages
7
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
115
Number
11
Start Page
1
End Page
7
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147381
DOI
10.1063/1.4868630
ISSN
0021-8979
1089-7550
Abstract
Various plasma treatment effects such as oxygen (O-2), nitrogen (N-2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O-2 and N-2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented. (C) 2014 AIP Publishing LLC.
Files in This Item
Go to Link
Appears in
Collections
ICT융합공학부 > 응용물리전공 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Joo, Min Kyu photo

Joo, Min Kyu
첨단소재·전자융합공학부 (신소재물리전공)
Read more

Altmetrics

Total Views & Downloads

BROWSE