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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors
- Authors
- Kim, Jae-Sung; Joo, Min-Kyu; Piao, Ming Xing; Ahn, Seung-Eon; Choi, Yong-Hee; Jang, Ho-Kyun; Kim, Gyu-Tae
- Issue Date
- Mar-2014
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.115, no.11, pp 1 - 7
- Pages
- 7
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 115
- Number
- 11
- Start Page
- 1
- End Page
- 7
- ISSN
- 0021-8979
1089-7550
- Abstract
- Various plasma treatment effects such as oxygen (O-2), nitrogen (N-2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O-2 and N-2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented. (C) 2014 AIP Publishing LLC.
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