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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Authors
Kim, JSJoo, MKPiao, MXAhn, SEChoi, YHNa, JShin, MHan, MJJang, HKKim, GT
Issue Date
May-2014
Publisher
ELSEVIER SCIENCE SA
Keywords
Amorphous oxide; InGaZnO; Thin film transistor; Transmission line method; Contact resistance; Transfer length; Specific contact resistivity; Contact area
Citation
THIN SOLID FILMS, v.558, pp 279 - 282
Pages
4
Journal Title
THIN SOLID FILMS
Volume
558
Start Page
279
End Page
282
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147382
DOI
10.1016/j.tsf.2014.02.026
ISSN
0040-6090
1879-2731
Abstract
To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (R-c). From the comparison of specific contact resistivity and transfer length (L-T), the relationship between R-c and contact area including the contact width and the L-T was established and demonstrated that R-c is controllable by optimizing the contact area geometry. (C) 2014 Published by Elsevier B. V.
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첨단소재·전자융합공학부 (신소재물리전공)
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