Separation of surface accumulation and bulk neutral channel in junctionless transistors
- Authors
- Jeon, DY; Park, SJ; Mouis, M; Joo, MK; Barraud, S; Kim, GT; Ghibaudo, G
- Issue Date
- Jun-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.26
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 26
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147383
- DOI
- 10.1063/1.4886139
- ISSN
- 0003-6951
1077-3118
- Abstract
- The error rate of low-field mobility (mu(0)) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N-d) for a typical value of the first order mobility attenuation factor theta(0) approximate to 0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (mu(0_acc)) and the bulk neutral channel mobility (mu(bulk)) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between mu(0_acc) and mu(bulk) is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform. (C) 2014 AIP Publishing LLC.
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