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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Authors
Jeon, DYPark, SJMouis, MJoo, MKBarraud, SKim, GTGhibaudo, G
Issue Date
Jun-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.104, no.26
Journal Title
APPLIED PHYSICS LETTERS
Volume
104
Number
26
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147383
DOI
10.1063/1.4886139
ISSN
0003-6951
Abstract
The error rate of low-field mobility (mu(0)) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N-d) for a typical value of the first order mobility attenuation factor theta(0) approximate to 0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (mu(0_acc)) and the bulk neutral channel mobility (mu(bulk)) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between mu(0_acc) and mu(bulk) is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform. (C) 2014 AIP Publishing LLC.
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