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Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Authors
Kim, BongjunJang, SeonpilPrabhumirashi, Pradyumna L.Geier, Michael L.Hersam, Mark C.Dodabalapur, Ananth
Issue Date
Aug-2013
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.103, no.8
Journal Title
APPLIED PHYSICS LETTERS
Volume
103
Number
8
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147435
DOI
10.1063/1.4819465
ISSN
0003-6951
1077-3118
Abstract
High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-kappa solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm(2) V-1 s(-1) and 10(5), respectively, at low operating voltages (<5V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics. (C) 2013 AIP Publishing LLC.
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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