Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Abstract

High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-kappa solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm(2) V-1 s(-1) and 10(5), respectively, at low operating voltages (<5V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics. (C) 2013 AIP Publishing LLC.