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Probing compositional disorder in vanadium oxide thin films grown on atomic layer deposited hafnia on silicon by capacitance spectroscopy

Authors
Ko, C (Ko, Changhyun)Zhou, Y (Zhou, You)Ramanathan, S (Ramanathan, Shr
Issue Date
Jan-2012
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, v.30, no.1
Journal Title
JOURNAL OF VACUUM SCIENCE TECHNOLOGY A
Volume
30
Number
1
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147659
DOI
10.1116/1.3659020
ISSN
0734-2101
Abstract
The authors investigate capacitance-voltage characteristics of HfO2/VOx/HfO2/n-Si metal-oxide semiconductor devices that include vanadium oxide (VOx) films of different composition. Temperature dependent capacitance-voltage measurements are reported spanning the metal-insulator transition boundary of VOx films. The measured trends in dielectric properties are cross-correlated with resistance ratio change and oxidation state in identical films. The results could be of relevance to advancing synthesis of correlated oxide films on dielectric layers and further utilizing capacitance spectroscopy as a way to probe oxide stoichiometry in gated heterostructures. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3659020]
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