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Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices

Authors
Ko, CH (Ko, Changhyun)Ramanathan, S (Ramanathan, Shr
Issue Date
Aug-2009
Publisher
AMER INST PHYSICS
Keywords
capacitance; dielectric thin films; electric admittance; elemental semiconductors; metal-insulator transition; MIS capacitors; silicon; vanadium compounds
Citation
JOURNAL OF APPLIED PHYSICS, v.106, no.3, pp 1 - 6
Pages
6
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
106
Number
3
Start Page
1
End Page
6
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148029
DOI
10.1063/1.3186024
ISSN
0021-8979
1089-7550
Abstract
Utilizing metal-vanadium oxide (VO2)-semiconductor capacitor device structures, we have investigated the temperature- and frequency-dependent dielectric and ac conductance responses of vanadium oxide thin films that undergo metal-insulator transition (MIT). In both metallic and insulating regimes, VO2-based devices showed large tunabilities as high as similar to 95% and similar to 42%-54%, respectively. The frequency dependence of capacitance and ac conductance displays power-law behavior with respect to temperature and applied voltage over a broad range. Low-frequency dispersion in dielectric properties was also observed and their onset frequency varies across the MIT from similar to 0.5 MHz in insulating state to similar to 50 kHz in metallic state. The results are of potential relevance to utilizing functional oxides in electronic devices.
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Ko, Chang Hyun
첨단소재·전자융합공학부 (신소재물리전공)
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