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Structural and magnetic phase stability of Group IV/MnAs superlattices for spintronics applications스핀트로닉스 응용을 위한 Group IV/MnAS 초격자의 구조 및 자성 안정성에 대한 연구

Other Titles
스핀트로닉스 응용을 위한 Group IV/MnAS 초격자의 구조 및 자성 안정성에 대한 연구
Authors
김미영Lee J.J.Freeman A.J
Issue Date
Mar-2007
Publisher
Elsevier BV
Keywords
First-principles calculation; FLAPW; Group IV/MnAs superlattice; Half metallicity
Citation
Journal of Magnetism and Magnetic Materials, v.310, no.2, pp 2144 - 2146
Pages
3
Journal Title
Journal of Magnetism and Magnetic Materials
Volume
310
Number
2
Start Page
2144
End Page
2146
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148450
DOI
10.1016/j.jmmm.2006.10.939
ISSN
0304-8853
1873-4766
Abstract
Results of first-principles electronic structure calculations and experiments on molecular beam epitaxy grown samples of Group IV/MnAs superlattices where Group IV = Si and Ge are reported. The structural and magnetic phase stabilities were determined by total energy and atomic force calculations using the full-potential linearized augmented plane-wave (FLAPW) method within the generalized gradient approximation. The zinc-blende MnAs layers in these superlattices showed interesting behavior, such as different magnetic phase transitions and half-metallicity where the competition between the exchange interaction of Mn atoms through direct d-d and indirect p-d channels played an important role. For example, for the Si/MnAs case, the antiferromagnetic (AFM) ground state makes a transition to a ferromagnetic (FM) phase upon a 2% tetragonal distortion. A comparison of the electronic structures of the Si/MnAs and Ge/MnAs superlattices exhibits the dependence of the magnetism and the magnetic phase stability on the interatomic distance as well as on the host anion. Experimental results on the Si/MnAs superlattice revealed that AFM ordering is found to be stable over the FM phase while the Ge/MnAs superlattice showed a dominant FM phase at zero temperature. (c) 2006 Elsevier B.V. All rights reserved.
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