Magnetic Proerties of Ge/MnAs Digital HeterostructuresGe/MnAs 디지털 이종구조의 자성연구
- Other Titles
- Ge/MnAs 디지털 이종구조의 자성연구
- Authors
- J. J. Lee; 김미영; J. H. Song; Y. Cui; J. B. Ketterson
- Issue Date
- Jun-2007
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Anomalous Hall effect; digital heterostructure; half-metallicity; magnetic anisotropy.
- Citation
- IEEE Transactions on Magnetics, v.43, no.6, pp 3034 - 3036
- Pages
- 3
- Journal Title
- IEEE Transactions on Magnetics
- Volume
- 43
- Number
- 6
- Start Page
- 3034
- End Page
- 3036
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148461
- DOI
- 10.1109/TMAG.2007.893701
- ISSN
- 0018-9464
- Abstract
- Magnetic properties of Ge/MnAs digital heterostructure grown by molecular beam epitaxy are reported. A Ge (1 nm)/MnAs (0.15 nm)
digital heterostructure exhibited ferromagnetic ordering below 335 K. More importantly, the Ge (1 nm)/MnAs (0.15 nm) heterostructure
shows an n-type conductivity and an anomalous Hall effect at room temperature. Concurrently, the magnetic phase stabilities of the
Ge (1 nm)/MnAs (0.15 nm) digital heterostructure have been investigated using the highly precise all-electron full-potential linearized
augmented plane-wave (FLAPW) method within the generalized gradient approximation (GGA). A total energy calculations reveal that
the ferromagnetic coupling between the Mn atoms is energetically favored over the antiferromagnetic (100) and (110) coupling. The Ge
(1 nm)/MnAs (0.15 nm) digital heterostructure also showed a possible half-metallic ferromagnetic phase with a 0.25 eV band gap for the
minority spin channel, which indicates a promising possible spintronic application.
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