A new period-doubled modulation on the In/Si(111)4x1 surface induced by defects
- Authors
- 김한철; Lee, Geunseop; Yu, Sang-Yong; Lee D; Koo, Ja-Yong
- Issue Date
- Mar-2006
- Publisher
- IOP PUBLISHING LTD
- Citation
- Japanese Journal of Applied Physics, v.45, no.3B, pp 2087 - 2090
- Pages
- 4
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 45
- Number
- 3B
- Start Page
- 2087
- End Page
- 2090
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148622
- DOI
- 10.1143/JJAP.45.2087
- ISSN
- 0021-4922
1347-4065
- Abstract
- We report observations of defect-induced period-doubled (x2) modulations in scanning tunneling microscopy images of the In/Si(111)4 x 1 surface at room temperature. The perturbation is one-dimensional, ranging up to ten lattice constants in the row direction. The modulation is attributed to a perturbation in electronic charge density rather than to a lattice distortion. The defect-induced x2 structure differs from the low-temperature (LT) 4 x 2 observed for the defect-free Surface. First-principle calculations found that the defects stabilize a hypothetical structure with small lattice distortions, whose calculated energy is lower than that of the large lattice-distorted Structure proposed for the 4 x 2-LT phase. This symmetry-broken, defect-induced modulation is extraordinary in that it does not mimic the LT phase observed in the defect-free system.
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