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A new period-doubled modulation on the In/Si(111)4x1 surface induced by defects

Authors
김한철Lee, GeunseopYu, Sang-YongLee DKoo, Ja-Yong
Issue Date
Mar-2006
Publisher
IOP PUBLISHING LTD
Citation
Japanese Journal of Applied Physics, v.45, no.3B, pp 2087 - 2090
Pages
4
Journal Title
Japanese Journal of Applied Physics
Volume
45
Number
3B
Start Page
2087
End Page
2090
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148622
DOI
10.1143/JJAP.45.2087
ISSN
0021-4922
1347-4065
Abstract
We report observations of defect-induced period-doubled (x2) modulations in scanning tunneling microscopy images of the In/Si(111)4 x 1 surface at room temperature. The perturbation is one-dimensional, ranging up to ten lattice constants in the row direction. The modulation is attributed to a perturbation in electronic charge density rather than to a lattice distortion. The defect-induced x2 structure differs from the low-temperature (LT) 4 x 2 observed for the defect-free Surface. First-principle calculations found that the defects stabilize a hypothetical structure with small lattice distortions, whose calculated energy is lower than that of the large lattice-distorted Structure proposed for the 4 x 2-LT phase. This symmetry-broken, defect-induced modulation is extraordinary in that it does not mimic the LT phase observed in the defect-free system.
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