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One-dimensional chain structure produced by Ce on vicinal Si(100)
- Issue Date
- Mar-2006
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- SURFACE SCIENCE, v.600, pp 1283 - 1289
- Pages
- 7
- Journal Title
- SURFACE SCIENCE
- Volume
- 600
- Start Page
- 1283
- End Page
- 1289
- ISSN
- 0039-6028
1879-2758
- Abstract
- One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(100) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Cc coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Cc nanowires along the step edges on the vicinal Si(100) substrate at 580 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
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