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Two-Dimensional Carbon Incorporation into Si(001): C Amount and Structure of Si(001)-c(4x4)

Authors
Hanchul KimWondong KimGeunseop LeeJa-Yong Koo
Issue Date
Feb-2005
Publisher
The American Physical Society
Citation
Physical Review Letters, v.94, no.7, pp.1 - 4
Journal Title
Physical Review Letters
Volume
94
Number
7
Start Page
1
End Page
4
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148813
DOI
10.1103/PhysRevLett.94.076102
ISSN
0031-9007
Abstract
The C amount and the structure of the Si001-c4 4 surface is studied using scanning tunneling microscopy (STM) and ab initio calculations. The c4 4 phase is found to contain 1=8 monolayer C (1 C atom in each primitive unit cell). From the C amount and the symmetry of high-resolution STM images, it is inferred that the C atoms substitute the fourth-layer site below the dimer row. We construct a structure model relying on ab initio energetics and STM simulations. Each C atom induces an on-site dimer vacancy and two adjacent rotated dimers on the same dimer row. The c4 4 phase constitutes the subsurface Si0:875C0:125 layer with two-dimensionally ordered C atoms.
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