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Empty-state scanning tunneling microscopy image of C2H2 on Si(001) - new evidence for paired end-bridge di-sigma configuration

Authors
Wondong KimHanchul KimGeunseop LeeYoung-Kyu HongSekyung LeeJa-Yong Ko
Issue Date
Jul-2003
Publisher
Elsevier, the Netherlands
Citation
Surface Science, v.538, no.3, pp.L477 - L482
Journal Title
Surface Science
Volume
538
Number
3
Start Page
L477
End Page
L482
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/149123
DOI
10.1016/S0039-6028(03)00731-3
ISSN
0039-6028
Abstract
New evidence of the paired end-bridge configuration in the room-temperature adsorption geometries of C2H2 molecules on Si(0 0 1) is presented by scanning tunneling microscopy (STM) and ab initio pseudopotential calculations. The distinct four-leaved feature occupying two adjacent Si dimer sites in the experimental empty-state STM images are well reproduced by simulations of the paired end-bridge adsorption configuration. Calculated energetics suggests that the Si(0 0 1) surface is covered by paired end-bridge structures at the saturation coverage of 1 ML, in agreement with the existing experiments.
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