Reduction of Gap States of Ternary Ⅲ-Ⅴ Semiconductor Surfaces by Sulfur Passivation: Comparative studies of AlGaAs and InGaP
DC Field | Value | Language |
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dc.contributor.author | 이한길 | - |
dc.contributor.author | 서재명 | - |
dc.contributor.author | 김유권 | - |
dc.contributor.author | 정영수 | - |
dc.contributor.author | 김세훈 | - |
dc.date.accessioned | 2022-04-19T13:44:41Z | - |
dc.date.available | 2022-04-19T13:44:41Z | - |
dc.date.issued | 1996-05 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.issn | 1520-8559 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/150699 | - |
dc.description.abstract | The effects of sulfur passivation on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron spectroscopy. The surfaces were simultaneously prepared through degreasing and the use of an aqueous (NH4)(2)S-x treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted negligibly with P atoms. The band bending was reduced by 0.7 eV compared to a sputter-cleaned surface. Presumably, sulfur eliminated P-vacancy-related gap states by occupying P sites and forming In-S and Ga-S bonds. By postheat treatment at 180 degrees C, S atoms were not removed from the surface and band bending was reduced further by 0.1 eV. For AlGaAs, S atoms initially reacted with Ga and As, but this treatment could not remove the Al oxide previously formed in the air. Postheat treatment at 180 degrees C simply induced S redistribution from As to Ga and As desorption, which reduced the band bending by 0.3 eV compared to the sputter-cleaned surface-a result similar to that for GaAs. (C) 1996 American Vacuum Society. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AVS | - |
dc.title | Reduction of Gap States of Ternary Ⅲ-Ⅴ Semiconductor Surfaces by Sulfur Passivation: Comparative studies of AlGaAs and InGaP | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1116/1.580419 | - |
dc.identifier.scopusid | 2-s2.0-0342850912 | - |
dc.identifier.wosid | A1996UR13400052 | - |
dc.identifier.bibliographicCitation | J. Vac. Sci. Technol. A, v.14, no.3, pp 941 - 945 | - |
dc.citation.title | J. Vac. Sci. Technol. A | - |
dc.citation.volume | 14 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 941 | - |
dc.citation.endPage | 945 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.580419 | - |
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