Detailed Information

Cited 0 time in webofscience Cited 6 time in scopus
Metadata Downloads

Dependence of magnetic tunnel junction properties on tunnel barrier roughness

Authors
Rhee, Jang Roh
Issue Date
Sep-2006
Publisher
ELSEVIER SCIENCE BV
Keywords
Magnetic tunnel junction; Tunneling magnetoresistance; Tunnel barrier; Barrier width; Barrier height
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp E300 - E302
Journal Title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume
304
Number
1
Start Page
E300
End Page
E302
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15073
DOI
10.1016/j.jmmm.2006.02.028
ISSN
0304-8853
1873-4766
Abstract
Magnetic tunnel junctions (MTJs) consisting of Si/SiO(2)/Ta/Ru/IrMn/CoFe/Ru/CoFe/Al-O/CoFe/NiFe/Ru with different surface roughness of bottom electrode were prepared, and the dependence of tunneling magnetoresistance (TMR) ratio and resistance area product (RA) on surface roughness of tunnel barrier and the tunneling characteristics of these junction devices were investigated. The MTJ with rough tunnel barrier of 12 angstrom root mean square roughness (R(rms)) showed TMR ratio of 4% and RA of 2.2 k Omega mu m(2). In contrast, the MTJ with uniform tunnel barrier of R(rms) = 3 angstrom showed TMR ratio of 40% and RA of 14 k Omega mu m(2). As MTJs had more uniform tunnel barrier, TMR ratio and resistance were higher, while the interlayer coupling field decreased. It was confirmed that the smooth surface of bottom electrode was a basic requirement for MTJs. (C) 2006 Elsevier B.V. All rights reserved.
Files in This Item
There are no files associated with this item.
Appears in
Collections
ICT융합공학부 > 응용물리전공 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE