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Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions
- Authors
- Chun, B. S.; Ko, S. P.; Oh, B. S.; Hwang, J. Y.; Rhee, J. R.; Kim, T. W.; Saito, S.; Yoshimura, S.; Tsunoda, M.; Takahashi, M.; Kim, Y. K.
- Issue Date
- Sep-2006
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Magnetic tunnel junctions; Amorphous ferromagnet; NiFeSiB film
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp E258 - E260
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 304
- Number
- 1
- Start Page
- E258
- End Page
- E260
- ISSN
- 0304-8853
1873-4766
- Abstract
- Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure. (C) 2006 Elsevier B.V. All rights reserved.
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