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Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions
- Authors
- Chun, Byong Sun; Hwang, Jae Youn; Rhee, Jang Roh; Kim, Taewan; Saito, Shin; Yoshimura, Satoru; Tsunoda, Masakiyo; Takahashi, Migaku; Kim, Young Keun
- Issue Date
- Aug-2006
- Publisher
- ELSEVIER
- Keywords
- Magnetic tunnel junctions; Amorphous ferromagnetic materials; CoFeSiB
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.303, no.2, pp E223 - E225
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 303
- Number
- 2
- Start Page
- E223
- End Page
- E225
- ISSN
- 0304-8853
1873-4766
- Abstract
- Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm(3), as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs. (C) 2006 Elsevier B.V. All rights reserved.
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