Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing
- Authors
- Jung, Seoyeon; Lee, Jihyun; Park, Juhee; Pak, Sangyeon; Lim, Jungmoon; Cha, SeungNam; Kim, Bongjun
- Issue Date
- Jul-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- printed electronics; tunable switching threshold; molybdenum disulfide (MoS2); carbon nanotube (CNT)
- Citation
- NANOTECHNOLOGY, v.33, no.30, pp 1 - 5
- Pages
- 5
- Journal Title
- NANOTECHNOLOGY
- Volume
- 33
- Number
- 30
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151368
- DOI
- 10.1088/1361-6528/ac67ab
- ISSN
- 0957-4484
1361-6528
- Abstract
- MoS2 crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS2, another p-type semiconductor, whose performance can be adjusted corresponding to that of MoS2 in the limited chip area, has to be sought. Herein, we present a method for tuning switching threshold voltages of complementary inverters simply via inkjet printing without changing their channel dimensions. Random networks of inkjet printed single-walled carbon nanotubes are formed as p-channels beside MoS2, and their density and thickness are controlled by varying the number of printed layers. As a result, p-type transistor characteristics as well as inverter characteristics are facilely tuned only by varying the number of printed layers.
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