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Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing

Authors
Jung, SeoyeonLee, JihyunPark, JuheePak, SangyeonLim, JungmoonCha, SeungNamKim, Bongjun
Issue Date
Jul-2022
Publisher
IOP Publishing Ltd
Keywords
printed electronics; tunable switching threshold; molybdenum disulfide (MoS2); carbon nanotube (CNT)
Citation
NANOTECHNOLOGY, v.33, no.30, pp.1 - 5
Journal Title
NANOTECHNOLOGY
Volume
33
Number
30
Start Page
1
End Page
5
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151368
DOI
10.1088/1361-6528/ac67ab
ISSN
0957-4484
Abstract
MoS2 crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS2, another p-type semiconductor, whose performance can be adjusted corresponding to that of MoS2 in the limited chip area, has to be sought. Herein, we present a method for tuning switching threshold voltages of complementary inverters simply via inkjet printing without changing their channel dimensions. Random networks of inkjet printed single-walled carbon nanotubes are formed as p-channels beside MoS2, and their density and thickness are controlled by varying the number of printed layers. As a result, p-type transistor characteristics as well as inverter characteristics are facilely tuned only by varying the number of printed layers.
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