Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Seoyeon | - |
dc.contributor.author | Lee, Jihyun | - |
dc.contributor.author | Park, Juhee | - |
dc.contributor.author | Pak, Sangyeon | - |
dc.contributor.author | Lim, Jungmoon | - |
dc.contributor.author | Cha, SeungNam | - |
dc.contributor.author | Kim, Bongjun | - |
dc.date.accessioned | 2022-06-03T05:40:10Z | - |
dc.date.available | 2022-06-03T05:40:10Z | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151368 | - |
dc.description.abstract | MoS2 crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS2, another p-type semiconductor, whose performance can be adjusted corresponding to that of MoS2 in the limited chip area, has to be sought. Herein, we present a method for tuning switching threshold voltages of complementary inverters simply via inkjet printing without changing their channel dimensions. Random networks of inkjet printed single-walled carbon nanotubes are formed as p-channels beside MoS2, and their density and thickness are controlled by varying the number of printed layers. As a result, p-type transistor characteristics as well as inverter characteristics are facilely tuned only by varying the number of printed layers. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing | - |
dc.type | Article | - |
dc.publisher.location | United Kingdom | - |
dc.identifier.doi | 10.1088/1361-6528/ac67ab | - |
dc.identifier.scopusid | 2-s2.0-85130004685 | - |
dc.identifier.wosid | 000791568300001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.33, no.30, pp 1 - 5 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 33 | - |
dc.citation.number | 30 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | printed electronics | - |
dc.subject.keywordAuthor | tunable switching threshold | - |
dc.subject.keywordAuthor | molybdenum disulfide (MoS2) | - |
dc.subject.keywordAuthor | carbon nanotube (CNT) | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127
Copyright©Sookmyung Women's University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.