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Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface

Authors
Lee Byung ChulSeo YoukyungKim ChulminKim YeeunJoo Min-KyuKim Gyu-Tae
Issue Date
Jun-2022
Publisher
AIP Publishing
Citation
APPLIED PHYSICS LETTERS, v.120, no.25, pp.1 - 8
Journal Title
APPLIED PHYSICS LETTERS
Volume
120
Number
25
Start Page
1
End Page
8
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151400
DOI
10.1063/5.0093688
ISSN
0003-6951
Abstract
Black phosphorus (BP)-based broken gap heterojunctions have attracted significant attention mainly owing to its wide thickness-dependent Fermi level, offering opportunities to demonstrate various carrier transport characteristics and high performing optoelectronic applications. However, the interfacial effects on the carrier scattering mechanism of the two-dimensional (2D) broken gap heterojunctions are unclear. Herein, we discuss the origin of random telegraph noise of multilayer BP/ReS2 heterojunction diode, in particular, at the direct tunneling (DT) conduction regime. The gate-tunable diode characteristic of BP/ReS2 heterojunction allows one to unveil systematically the transition of the charge fluctuation mechanism from drift-diffusion to the DT regime. Unlike individual BP and ReS2 devices, the current noise histogram obtained from the BP/ReS2 heterojunction device exhibits exclusively two dominant peaks at the DT regime. We ascribed this distinct low-frequency noise feature representing the presence of random telegraph signal to the BP/ReS2 interfacial traps by taking into account of the inherent direct tunneling current conduction mechanism. In addition, the electrostatic bias-dependent power spectrum density manifests clearly that the dominant scattering mechanism is the carrier number fluctuation rather than tunneling barrier height fluctuation at the BP/ReS2 heterointerface. This study elucidates the carrier transport and the charge fluctuation mechanism at the 2D heterostructure interface. Published under an exclusive license by AIP Publishing.
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