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Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface

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dc.contributor.authorLee Byung Chul-
dc.contributor.authorSeo Youkyung-
dc.contributor.authorKim Chulmin-
dc.contributor.authorKim Yeeun-
dc.contributor.authorJoo Min-Kyu-
dc.contributor.authorKim Gyu-Tae-
dc.date.accessioned2022-08-01T05:40:12Z-
dc.date.available2022-08-01T05:40:12Z-
dc.date.issued2022-06-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151400-
dc.description.abstractBlack phosphorus (BP)-based broken gap heterojunctions have attracted significant attention mainly owing to its wide thickness-dependent Fermi level, offering opportunities to demonstrate various carrier transport characteristics and high performing optoelectronic applications. However, the interfacial effects on the carrier scattering mechanism of the two-dimensional (2D) broken gap heterojunctions are unclear. Herein, we discuss the origin of random telegraph noise of multilayer BP/ReS2 heterojunction diode, in particular, at the direct tunneling (DT) conduction regime. The gate-tunable diode characteristic of BP/ReS2 heterojunction allows one to unveil systematically the transition of the charge fluctuation mechanism from drift-diffusion to the DT regime. Unlike individual BP and ReS2 devices, the current noise histogram obtained from the BP/ReS2 heterojunction device exhibits exclusively two dominant peaks at the DT regime. We ascribed this distinct low-frequency noise feature representing the presence of random telegraph signal to the BP/ReS2 interfacial traps by taking into account of the inherent direct tunneling current conduction mechanism. In addition, the electrostatic bias-dependent power spectrum density manifests clearly that the dominant scattering mechanism is the carrier number fluctuation rather than tunneling barrier height fluctuation at the BP/ReS2 heterointerface. This study elucidates the carrier transport and the charge fluctuation mechanism at the 2D heterostructure interface. Published under an exclusive license by AIP Publishing.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherAIP Publishing-
dc.titleUnderstanding random telegraph noise in two-dimensional BP/ReS2 heterointerface-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/5.0093688-
dc.identifier.scopusid2-s2.0-85133070420-
dc.identifier.wosid000814789700005-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.120, no.25, pp 1 - 8-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume120-
dc.citation.number25-
dc.citation.startPage1-
dc.citation.endPage8-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusBLACK PHOSPHORUS-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusMECHANICS-
dc.subject.keywordPlusDEVICE-
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