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Increasing CO Binding Energy and Defects by Preserving Cu Oxidation State via O-2-Plasma-Assisted N Doping on CuO Enables High C2+ Selectivity and Long-Term Stability in Electrochemical CO2 Reduction

Authors
Park, Dong GyuChoi, Jae WonChun, HojeJang, Hae SungLee, HeebinChoi, Won HoMoon, Byeong CheulKim, Keon-HanKim, Min GyuChoi, Kyung MinHan, ByungchanKang, Jeung Ku
Issue Date
Jun-2023
Publisher
AMER CHEMICAL SOC
Keywords
electrochemical CO2 reduction to C2+ product; O-2-plasma-assisted N doping; increasing CObinding energy and defect sites; preserving Cu oxidationstate; in situ X-ray absorption spectroscopy
Citation
ACS CATALYSIS, v.13, no.13, pp 9222 - 9233
Pages
12
Journal Title
ACS CATALYSIS
Volume
13
Number
13
Start Page
9222
End Page
9233
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151817
DOI
10.1021/acscatal.3c01441
ISSN
2155-5435
Abstract
Cu is considered as the most promising catalyst for theelectrochemicalcarbon dioxide reduction reaction (CO2RR) to produce C2+ hydrocarbons, but achieving high C2+ productselectivity and efficiency with long-term stability remains one ofgreat challenges. Herein, we report a strategy to realize the CO2RR catalyst allowing high C2+ product selectivityand stable catalytic properties by utilizing the benefits of oxygen-plasma-assistednitrogen doping on CuO. It is exhibited that the defects such as oxygenvacancies and grain boundaries suitable for CO2RR are generatedby N-2 plasma radicals on CuO. Also, the oxidation stateof Cu is maintained without Cu reduction by O-2 plasma.Indeed, ON-CuO synthesized through oxygen-plasma-assisted nitrogendoping is demonstrated to enable a high C2+ product selectivityof 77% (including a high C2H4 selectivity of56%) with a high current density of -34.6 mA/cm(2) at -1.1 V vs RHE, as well as a long-term stability for 22h without performance degradation. High CO2RR performancesare ascribed to the increased CO binding energy and catalytic sitesin N-doped CuO. Furthermore, an in situ X-ray absorption near-edgestructure analysis reveals that the defects in ON-CuO are favorablefor C-C coupling leading to C2+ products.
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