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Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-based Transistors

Authors
Kim, SomiJung, SeoyeonKim, BongjunYoo, Hocheon
Issue Date
Feb-2023
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Behavioral sciences; Field effect transistors; Ink jet printing; inkjet printing; inverter circuit; logic-in-memory; multi-valued logic; Stress; Substrates; thin-film transistors; Transient analysis; Transmission line measurements
Citation
IEEE Electron Device Letters, v.44, no.2, pp 265 - 268
Pages
4
Journal Title
IEEE Electron Device Letters
Volume
44
Number
2
Start Page
265
End Page
268
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/152032
DOI
10.1109/LED.2022.3232805
ISSN
0741-3106
1558-0563
Abstract
This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress. IEEE
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